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NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
* * * * HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: * Flat Lead Style with a height of just 0.50mm
NE662M16
DESCRIPTION
NEC's NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M16" package is ideal for today's portable wireless applications. The NE662M16 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. M16
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain2 at VCE = 2 V, IC = 5 mA Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT Output Power at 1 dB compression point at VCE = 2 V, IC = 20 mA, f = 2 GHz Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz pF GHz dB dB dB dBm 14 UNITS nA nA 50 20 70 25 20 17 1.1 11 22 0.14 0.24 1.5 MIN NE662M16 2SC5704 M16 TYP MAX 200 200 100
DC
IEBO hFE fT MSG |S21E|2 NF P1dB IP3 Cre
Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 4. MSG = S21 S12
RF
NE662M16 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 15 3.3 1.5 35 115
1 1.00.05 0.8+0.07 -0.05 0.150.05 0.125+0.1 -0.05
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M16
150
0.4
1.2+0.07 -0.05
2
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
0.8
0.4
3
ORDERING INFORMATION
PART NUMBER NE662M16-T3-A QUANTITY 10 kpcs/reel PACKAGING Pin 1 (Collector), Pin 6 (Emitter) face the perforation side on the tape.
PIN CONNECTIONS 1. Collector 4. Base 2. Emitter 5. Emitter 3. Emitter 6. Emitter
0.50.05
4
5
-65 to +150
6
zC
NE662M16 TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
Total Power Dissipation, Ptot (mW)
250 200 150 115 100 50
Mounted on Glass Epoxy Board (1.08 cm2 x 1.0 mm (t) )
Reverse Transfer Capacitance, Cre (pF)
300
0.20 f = 1 MHz 0.16
0.12
0.08
0.04
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature, TA (C)
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
35 VCE = 2 V 30
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
40 35 500 A 450 A 400 A 350 A 300 A 250 A 200 A 150 A 100 A 1 2 IB = 50 A 4 3
Collector Current, Ic (mA)
Collector Current, Ic (mA)
0.2 0.4 0.6 0.8 1.0
25 20 15 10 5
30 25 20 15 10 5 0
0
Base to Emitter Voltage, VBE (V)
Collector to Emitter Voltage, VCE (V)
DC CURRENT GAIN vs. COLLECTOR CURRENT
1 000
VCE = 2 V
GAIN BANDWIDTH vs. COLLECTOR CURRENT
30
VCE = 2 V f = 2 GHz
Gain Bandwdth, fT (GHz)
1 10 100
25 20 15 10 5 0 1
DC Current Gain, hFE
100
10 0.1
10
100
Collector Current, lC (mA)
Collector Current, IC (mA)
NE662M16 TYPICAL PERFORMANCE CURVES (TA = 25C)
INSERTION POWER GAIN vs. FREQUENCY
35 VCE = 1 V IC = 20 mA
INSERTION POWER GAIN vs. FREQUENCY
35 VCE = 2 V IC = 20 mA
Insertion Power Gain, IS21eI2
Insertion Power Gain, IS21eI2
30 25 20 15 10 5 0 0.1
30 25 20 15 10 5 0 0.1
1
10
1
10
Frequency, f (GHz)
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
30
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
30
Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
MSG
Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
VCE = 2 V f = 1 GHz
VCE = 2 V
f = 2 GHz
25 20 15 10 5 0 1
|S21e|2
25 MSG 20 15 10 5 0 1 |S21e|2 MAG
10
100
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER
30
VCE = 2 V, f = 1 GHz Icq = 20 mA (RF OFF)
OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER
50
30
VCE = 2 V, f = 2 GHz Icq = 20 mA (RF OFF)
50
Output Power, Pout (dBm)
Output Power, Pout (dBm)
Collector Current, Ic (mA)
20
40 Pout
20
40
10
30
10
Pout
30
0
IC
20
0
IC
20
-10 -25
-15
5
10 5
-10 -25
-15
5
10 5
Input Power, Pin (dBm)
Input Power, Pin (dBm)
Collector Current, Ic (mA)
NE662M16 TYPICAL PERFORMANCE CURVES (TA = 25C)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
6 5 VCE = 1 V f = 1 GHz Ga 30 25
6 5 VCE = 2 V f = 1 GHz Ga
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
30 25 20 15 10 NF 5 0 100
Noise Figure, NF (dB)
Noise Figure, NF (dB)
4 3 2 1 0 1 NF
20 15 10 5 0 100
4 3 2 1 0 1
10
10
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
6 5 VCE = 1 V f = 1.5 GHz 30 25 6 5
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
30 VCE = 2 V f = 1.5 GHz Ga 4 3 2 NF 1 0 1 20 15 10 5 0 100 25
Noise Figure, NF (dB)
4 3 2 1 0 1
Ga
20 15 10
NF
5 0 100
10
Noise Figure, NF (dB)
10
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
6 5 VCE = 1 V f = 2 GHz 30 25 20 Ga 3 2 1 0 1 NF 15 10 5 0 100
6 5
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
30 VCE = 2 V f = 2 GHz 25 20 15 10 NF 5 0 100
Noise Figure, NF (dB)
4
Noise Figure, NF (dB)
4 3 2 1 0 1
Ga
10
10
Collector Current, IC (mA)
Collector Current, IC (mA)
NE662M16 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25 j100
+90 +135 +45
j10 0 10 S21 S22 -j10 25 50 100
5 +180 S21
10 +0
-135
-j25 -j50 -j100
-45
-90
NE662M16 VC = 2 V, IC = 5 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 MAG 0.79 0.79 0.78 0.76 0.74 0.73 0.71 0.69 0.68 0.66 0.65 0.64 0.64 0.63 0.62 0.61 0.60 0.60 0.59 0.58 0.58 0.57 0.57 0.56 0.56 0.55 0.55 0.54 0.54 0.53 0.52 0.52 0.52 0.52 0.51 0.51 0.51 0.51 0.51 0.51 S11 ANG -8.34 -20.52 -30.77 -39.87 -48.66 -56.79 -64.12 -71.30 -77.50 -83.36 -88.67 -93.70 -98.23 -102.48 -106.53 -110.24 -113.97 -117.60 -120.80 -124.09 -127.67 -130.76 -133.98 -136.85 -139.86 -142.72 -145.66 -148.25 -151.04 -153.76 -156.67 -159.41 -162.03 -164.80 -167.55 -170.15 -172.65 -174.91 -177.27 -179.59 MAG 13.52 13.20 12.77 12.28 11.75 11.15 10.59 10.02 9.48 8.98 8.55 8.15 7.79 7.45 7.14 6.82 6.57 6.36 6.11 5.86 5.69 5.51 5.37 5.16 5.03 4.88 4.75 4.58 4.46 4.35 4.21 4.09 4.00 3.89 3.78 3.68 3.61 3.51 3.40 3.31 S21 ANG 171.32 165.06 158.29 152.12 146.29 140.96 136.12 131.99 128.20 124.77 121.61 118.55 115.75 113.15 110.70 108.22 105.79 103.81 102.01 99.85 97.73 95.62 94.20 92.25 90.06 88.26 86.62 84.94 82.99 81.42 79.85 78.16 76.53 75.17 73.64 71.91 70.42 69.29 67.93 66.28 MAG 0.01 0.02 0.02 0.03 0.04 0.04 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.09 0.09 S12 ANG 84.69 78.92 73.38 68.92 64.34 60.23 56.71 53.36 50.48 47.89 45.67 43.73 42.02 40.50 39.06 37.77 36.69 35.72 34.87 34.09 33.33 32.59 32.26 31.81 31.21 30.84 30.55 30.18 30.00 29.61 29.45 29.21 28.97 28.78 28.67 28.50 28.28 28.15 28.08 27.96 MAG 0.98 0.96 0.93 0.90 0.87 0.83 0.79 0.76 0.72 0.69 0.66 0.64 0.61 0.59 0.57 0.55 0.53 0.51 0.50 0.48 0.47 0.46 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.36 0.35 0.34 0.33 0.32 0.32 0.31 0.30 0.29 S22 ANG -5.81 -11.66 -16.99 -21.91 -26.38 -30.37 -33.94 -37.10 -39.91 -42.40 -44.60 -46.56 -48.38 -49.89 -51.38 -52.58 -53.71 -54.81 -55.74 -56.51 -57.44 -57.89 -58.61 -59.18 -59.83 -60.32 -60.89 -61.28 -61.71 -62.28 -62.64 -63.08 -63.54 -64.05 -64.59 -65.11 -65.78 -66.41 -67.07 -67.74 0.13 0.09 0.11 0.14 0.17 0.20 0.24 0.26 0.29 0.32 0.35 0.38 0.40 0.43 0.46 0.49 0.52 0.55 0.58 0.61 0.64 0.66 0.68 0.71 0.74 0.77 0.80 0.83 0.87 0.90 0.93 0.96 0.99 1.02 1.05 1.07 1.09 1.12 1.16 1.19 K MAG1 (dB) 32.18 29.17 27.36 26.09 25.11 24.28 23.60 22.99 22.47 21.99 21.59 21.22 20.88 20.57 20.28 19.99 19.74 19.54 19.31 19.06 18.89 18.68 18.53 18.31 18.17 17.98 17.83 17.63 17.50 17.34 17.17 17.02 16.88 15.94 15.28 14.77 14.44 14.02 13.59 13.22
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE662M16 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25 j10 0 25 10 S11 50 S22 -j10 100 j100
+90 +135 +45
5 10 15 20 +180 S21 +0
-j25 -j50
-j100
-135 -90
-45
NE662M16 VC = 2 V, IC = 10 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 MAG 0.66 0.66 0.65 0.63 0.61 0.60 0.58 0.57 0.56 0.55 0.55 0.54 0.54 0.53 0.53 0.52 0.52 0.52 0.51 0.51 0.51 0.50 0.50 0.50 0.50 0.49 0.49 0.49 0.48 0.48 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 S11 ANG -12.81 -28.48 -41.93 -53.87 -64.70 -74.41 -82.86 -90.61 -97.18 -103.22 -108.53 -113.37 -117.69 -121.63 -125.35 -128.85 -132.25 -135.50 -138.46 -141.58 -144.72 -147.54 -150.41 -153.04 -155.65 -158.30 -160.91 -163.29 -165.82 -168.40 -171.02 -173.52 -175.90 -178.39 179.16 176.86 174.73 172.77 170.80 168.82 MAG 21.08 20.34 19.32 18.18 16.97 15.75 14.65 13.62 12.70 11.88 11.17 10.51 9.95 9.43 8.96 8.50 8.13 7.82 7.48 7.14 6.89 6.66 6.44 6.17 5.98 5.80 5.61 5.40 5.24 5.09 4.93 4.78 4.66 4.53 4.39 4.27 4.18 4.06 3.93 3.83 S21 ANG 170.08 161.46 153.18 145.93 139.38 133.63 128.64 124.38 120.59 117.23 114.18 111.31 108.65 106.24 103.96 101.70 99.47 97.63 96.05 94.06 92.12 90.21 88.94 87.15 85.19 83.57 82.16 80.62 78.93 77.50 76.12 74.60 73.12 71.93 70.55 69.00 67.66 66.70 65.49 63.99 MAG 0.01 0.01 0.02 0.03 0.03 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 S12 ANG 81.45 76.90 70.56 65.20 60.63 56.67 53.54 50.71 48.39 46.60 45.17 43.92 42.92 42.14 41.39 40.83 40.51 40.23 39.88 39.77 39.58 39.38 39.49 39.53 39.40 39.29 39.33 39.31 39.52 39.41 39.56 39.47 39.46 39.49 39.50 39.45 39.36 39.24 39.22 39.15 MAG 0.96 0.94 0.90 0.85 0.80 0.75 0.70 0.66 0.62 0.58 0.55 0.52 0.50 0.47 0.45 0.43 0.42 0.40 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.27 0.26 0.25 0.24 0.24 0.23 0.22 0.22 0.21 0.20 S22 ANG -7.79 -15.60 -22.67 -28.92 -34.46 -39.19 -43.27 -46.77 -49.77 -52.36 -54.59 -56.54 -58.27 -59.73 -61.06 -62.21 -63.19 -64.16 -64.99 -65.63 -66.43 -66.83 -67.39 -67.86 -68.39 -68.81 -69.31 -69.61 -70.04 -70.48 -70.87 -71.30 -71.76 -72.30 -72.89 -73.50 -74.30 -75.12 -75.94 -76.91
K 0.19 0.13 0.16 0.20 0.24 0.28 0.33 0.37 0.41 0.45 0.49 0.52 0.56 0.59 0.63 0.66 0.70 0.73 0.76 0.80 0.82 0.84 0.87 0.90 0.93 0.95 0.98 1.01 1.04 1.06 1.09 1.11 1.13 1.15 1.17 1.19 1.21 1.23 1.25 1.27
MAG1 (dB) 34.48 31.43 29.60 28.32 27.29 26.47 25.76 25.14 24.59 24.11 23.68 23.28 22.91 22.57 22.24 21.92 21.65 21.39 21.12 20.83 20.62 20.38 20.17 19.91 19.72 19.50 19.29 18.53 17.69 17.14 16.67 16.22 15.88 15.52 15.17 14.85 14.60 14.28 13.93 13.64
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE662M16 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25 j100
+135 +45 +90
j10 0 10 S11 S22 -j10
-135 -45
25
50
100
+180 S11
5 10 15 20 25 +0
-j25 -j50
-j100
-90
NE662M16 VC = 2 V, IC = 20 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 MAG 0.51 0.51 0.51 0.51 0.50 0.50 0.49 0.49 0.49 0.49 0.48 0.48 0.48 0.48 0.48 0.48 0.48 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.46 0.46 0.46 0.46 0.45 0.45 0.45 0.45 0.45 0.45 0.46 0.46 0.46 0.46 0.46 S11 ANG -19.24 -39.58 -56.67 -71.47 -83.85 -94.44 -103.20 -110.77 -117.07 -122.58 -127.34 -131.56 -135.30 -138.62 -141.83 -144.87 -147.80 -150.55 -153.08 -155.81 -158.52 -161.02 -163.41 -165.69 -167.97 -170.37 -172.58 -174.73 -177.01 -179.36 178.28 176.08 173.87 171.68 169.53 167.47 165.67 163.96 162.28 160.56 MAG 28.64 27.18 25.27 23.19 21.13 19.22 17.57 16.11 14.85 13.76 12.83 11.98 11.27 10.62 10.04 9.49 9.04 8.66 8.25 7.86 7.56 7.29 7.03 6.72 6.50 6.29 6.07 5.84 5.65 5.49 5.31 5.14 5.00 4.86 4.71 4.58 4.47 4.34 4.21 4.09 S21 ANG 168.38 157.71 148.17 140.08 133.18 127.33 122.40 118.27 114.65 111.47 108.63 105.97 103.49 101.28 99.19 97.12 95.06 93.37 91.95 90.10 88.29 86.54 85.38 83.75 81.93 80.42 79.19 77.76 76.22 74.88 73.63 72.22 70.83 69.75 68.47 67.03 65.80 64.93 63.80 62.37 MAG 0.01 0.01 0.02 0.02 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 S12 ANG 79.10 74.03 67.79 62.44 58.17 54.93 52.50 50.56 49.13 48.10 47.35 46.96 46.65 46.44 46.48 46.28 46.44 46.55 46.81 46.88 46.96 47.15 47.44 47.56 47.55 47.65 47.79 47.81 47.96 47.89 48.00 47.97 47.81 47.81 47.78 47.68 47.46 47.30 47.24 46.96 MAG 0.94 0.90 0.85 0.79 0.72 0.66 0.61 0.56 0.52 0.49 0.46 0.43 0.41 0.39 0.37 0.35 0.33 0.32 0.31 0.29 0.28 0.27 0.26 0.26 0.25 0.24 0.23 0.22 0.21 0.21 0.20 0.19 0.19 0.18 0.18 0.17 0.16 0.16 0.15 0.15 S22 ANG -9.68 -19.55 -28.23 -35.68 -41.91 -47.08 -51.40 -55.03 -58.07 -60.66 -62.85 -64.73 -66.43 -67.82 -69.05 -70.13 -71.09 -71.97 -72.73 -73.33 -74.04 -74.48 -74.96 -75.41 -75.93 -76.35 -76.85 -77.18 -77.67 -78.08 -78.62 -79.11 -79.69 -80.42 -81.20 -82.06 -83.19 -84.30 -85.66 -87.01 0.26 0.20 0.23 0.28 0.33 0.39 0.44 0.49 0.54 0.59 0.64 0.68 0.72 0.75 0.79 0.83 0.86 0.89 0.92 0.95 0.97 0.99 1.01 1.04 1.06 1.07 1.09 1.12 1.14 1.16 1.17 1.19 1.20 1.22 1.23 1.24 1.25 1.27 1.29 1.30 K MAG1 (dB) 36.13 33.13 31.27 29.98 28.93 28.06 27.33 26.69 26.11 25.60 25.12 24.67 24.27 23.88 23.50 23.14 22.81 22.51 22.19 21.87 21.60 21.33 20.46 19.60 19.05 18.61 18.15 17.64 17.23 16.88 16.51 16.16 15.87 15.56 15.26 14.97 14.74 14.44 14.12 13.86
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain 3-46
NE662M16 NE662M16 NONLINEAR MODEL SCHEMATIC
LBX Base LB CCE CCB LCX Collector
CBEPKG
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 1.6e-16 105 1.02 23 0.38 1e-6 30 12 1.02 2.5 0.1 3e-15 1.28 1.1 6 3.5 1.3e-3 8.75 0.4e-12 0.6 0.5 0.1e-12 0.75 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.3 0.1 0 0.75 0 0.6 2e-12 0.2 0.2 0.03 0 1e-11 1.11 0 3 0 1 MODEL RANGE Frequency: 0.1 to 4 GHz Bias: VCE = 0.5 V to 3 V, IC = 1 mA to 30 mA Date: 01/15/2002
ADDITIONAL PARAMETERS
Parameters CCB CCE LB LE CCEPKG CBEPK LBX LCX LEX NE662M16 0.07e-12 0.09e-12 0.4e-9 0.14e-9 0.12e-12 0.1e-12 0.1e-9 0.6e-9 0.04e-9
(1) Gummel-Poon Model
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 01/22/2002
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.
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